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IPA70R360P7S

Specifications

SKU: 9778664

BUY IPA70R360P7S https://www.utsource.net/itm/p/9778664.html

Parameter Symbol Min Typ Max Unit Notes
On-State Resistance RDS(on) - 360 - @ VGS=10V, ID=25A
Gate Charge QG - 180 - nC
Input Capacitance Ciss - 4500 - pF @ VDS=600V
Output Capacitance Coss - 480 - pF @ VDS=600V
Total Capacitance Crss - 95 - pF @ VDS=600V
Continuous Drain Current ID - 70 - A @ TC=25°C
Pulse Drain Current ID puls - 210 - A @ TC=25°C, tpuls=10μs
Maximum Drain-Source Voltage VDS - 700 - V
Gate-Source Voltage VGS -10 0 20 V
Junction Temperature TJ -55 - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid damage to the leads and body.
  2. Gate Drive:

    • Use a gate resistor to limit current and reduce ringing.
    • Ensure VGS does not exceed the maximum ratings to prevent damage.
  3. Thermal Management:

    • Monitor the junction temperature to avoid overheating.
    • Use thermal paste between the device and heatsink for better thermal conductivity.
  4. Electrical Connections:

    • Ensure all connections are secure and free from corrosion.
    • Use appropriate wire gauges to handle the current levels.
  5. Surge Protection:

    • Implement surge protection circuits to protect against voltage spikes and transients.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Follow ESD (Electrostatic Discharge) precautions during handling and storage.
  7. Testing:

    • Perform initial testing at reduced power levels to ensure proper operation.
    • Regularly inspect the device for signs of wear or damage.

By following these guidelines, you can ensure optimal performance and longevity of the IPA70R360P7S MOSFET.

(For reference only)

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