Specifications
SKU: 9778664
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
On-State Resistance | RDS(on) | - | 360 | - | mΩ | @ VGS=10V, ID=25A |
Gate Charge | QG | - | 180 | - | nC | |
Input Capacitance | Ciss | - | 4500 | - | pF | @ VDS=600V |
Output Capacitance | Coss | - | 480 | - | pF | @ VDS=600V |
Total Capacitance | Crss | - | 95 | - | pF | @ VDS=600V |
Continuous Drain Current | ID | - | 70 | - | A | @ TC=25°C |
Pulse Drain Current | ID puls | - | 210 | - | A | @ TC=25°C, tpuls=10μs |
Maximum Drain-Source Voltage | VDS | - | 700 | - | V | |
Gate-Source Voltage | VGS | -10 | 0 | 20 | V | |
Junction Temperature | TJ | -55 | - | 175 | °C | |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid damage to the leads and body.
Gate Drive:
- Use a gate resistor to limit current and reduce ringing.
- Ensure VGS does not exceed the maximum ratings to prevent damage.
Thermal Management:
- Monitor the junction temperature to avoid overheating.
- Use thermal paste between the device and heatsink for better thermal conductivity.
Electrical Connections:
- Ensure all connections are secure and free from corrosion.
- Use appropriate wire gauges to handle the current levels.
Surge Protection:
- Implement surge protection circuits to protect against voltage spikes and transients.
Storage:
- Store in a dry, cool place away from direct sunlight and sources of heat.
- Follow ESD (Electrostatic Discharge) precautions during handling and storage.
Testing:
- Perform initial testing at reduced power levels to ensure proper operation.
- Regularly inspect the device for signs of wear or damage.
By following these guidelines, you can ensure optimal performance and longevity of the IPA70R360P7S MOSFET.
(For reference only)Inquiry - IPA70R360P7S