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GW38IH130D,STGW38IH130D

Specifications

SKU: 9779168

BUY GW38IH130D,STGW38IH130D https://www.utsource.net/itm/p/9779168.html

Parameter GW38IH130D STGW38IH130D
Type IGBT IGBT
Collector-Emitter Voltage (Vce) [V] 1300 1300
Collector Current (Ic) [A] 38 38
Gate-Emitter Voltage (Vge) [V] ±20 ±20
Power Dissipation (Ptot) [W] 450 450
Thermal Resistance (Rth(j-c)) [°C/W] 0.37 0.37
Case Temperature Range [°C] -40 to 150 -40 to 150
Storage Temperature Range [°C] -55 to 150 -55 to 150
Package TO-247-3L TO-247-3L
Manufacturer Generic STMicroelectronics

Instructions for Use

  1. Handling Precautions:

    • Avoid exposing the device to excessive static electricity.
    • Handle with care to avoid mechanical damage.
  2. Mounting:

    • Ensure proper heat sinking to maintain thermal resistance within specified limits.
    • Use recommended torque values for mounting screws to prevent damage.
  3. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
    • Use short, low-inductance leads for high-frequency applications.
  4. Operational Parameters:

    • Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
    • Ensure the gate-emitter voltage is within the specified range to avoid damage.
  5. Testing:

    • Perform initial testing at reduced power levels to verify correct operation.
    • Use appropriate test equipment and follow safety guidelines.
  6. Storage:

    • Store in a dry, cool environment to prevent moisture damage.
    • Keep away from direct sunlight and sources of heat.
  7. Environmental Considerations:

    • Dispose of the device according to local environmental regulations.
    • Follow RoHS compliance guidelines for handling and disposal.
(For reference only)

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