BUY MG150Q2YS40 https://www.utsource.net/itm/p/10062038.html
Silicon N-channel IGBT GTR module for high power switching, motor control applications
MG150Q2YS40 is a power module manufactured by Toshiba. It is a three-phase insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1500V and a maximum collector current of 150A. It is suitable for applications such as motor drives, welding machines, UPS systems, and solar inverters. The features of the MG150Q2YS40 include a low on-state voltage drop, a low switching noise, a low power loss, and a high surge capability. It also has a built-in temperature sensor and a built-in gate resistor for improved reliability. Additionally, it has a wide operating temperature range of -40°C to +125°C. (For reference only)