BUY MG150Q2YS50 https://www.utsource.net/itm/p/10062040.html
TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor
Description: The MG150Q2YS50 is a three-phase insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1500V and a maximum collector current of 150A. Features: - Low on-state voltage - High speed switching - Low power loss - High surge current capability - High reliability Applications: - Motor control - Uninterruptible power supplies (UPS) - Inverter applications - Renewable energy systems - Industrial automation (For reference only)