BUY IXFH26N50P https://www.utsource.net/itm/p/10065586.html

Description: The IXFH26N50P is a high voltage, high speed power MOSFET transistor with an N-channel enhancement mode. Features: Maximum Drain Source Voltage (VDS): 500 V Maximum Drain Current (ID): 26 A Maximum Gate Source Voltage (VGS): ±20 V Maximum Power Dissipation (PD): 200 W Operating Junction Temperature (TJ): -55 to 175 °C RDS(on): 0.09 Ohm Applications: Switching applications Motor control Power supplies Automotive applications Uninterruptible power supplies (UPS) Solar inverters Battery charger (For reference only)