BUY BSM75GD120DN2 https://www.utsource.net/itm/p/10069278.html

Description: The BSM75GD120DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 75A. Features: rn 1200V collector-emitter voltage rn 75A collector current rn Low switching losses rn Low on-state resistance rn High surge current capability rn High short-circuit capability Applications: The BSM75GD120DN2 is suitable for a wide range of applications, including motor control, welding, UPS, and other power conversion applications. It is also suitable for use in renewable energy systems, such as solar and wind power systems. (For reference only)