Specifications
SKU: 10084723
Description: This is an insulated-gate bipolar transistor (IGBT) module from Infineon. It is a three-phase, 1200V, 150A module with a fast recovery diode. Features: 1200V blocking voltage 150A continuous current Low switching losses High surge capability Low EMI Fast recovery diode High reliability Low thermal resistance Applications: Motor drives Uninterruptible power supplies Welding machines Solar inverters Industrial automation (For reference only)
Inquiry - FS150R12KT4