BUY 2SC3152 C3152 TO-247 https://www.utsource.net/itm/p/10212306.html

Description: The 2SC3152 is a NPN silicon epitaxial transistor designed for high-frequency power amplification. Features: High Breakdown Voltage: VCEO = 250 V High Transition Frequency: fT = 10 GHz High Gain: hFE = 30 (Typ.) Low Noise Figure: NF = 2.5 dB (Typ.) High Power Output: Pout = 10 W (Typ.) Applications: High Frequency Power Amplifier Low Noise Amplifier RF Amplifier (For reference only)