Specifications
SKU: 11190475
Parameter | Symbol | Min | Typical | Max | Unit | Description |
---|---|---|---|---|---|---|
Supply Voltage | VCC | 2.7 | 3.6 | V | Operating supply voltage | |
Standby Current | ISB | 1.0 | 2.0 | μA | Current consumption in standby mode | |
Active Current | IOP | 10 | 30 | mA | Current consumption during active operation | |
Programming Current | IPGM | 1.0 | 4.0 | mA | Current required for programming | |
Erase Time | tBERS | 3.0 | 5.0 | s | Time required for block erase | |
Page Program Time | tPP | 0.5 | 2.0 | ms | Time required for page program | |
Read Access Time | tR | 0.07 | 0.1 | μs | Time required to access data from memory | |
Write Enable Time | tWEL | 0.0 | 0.1 | μs | Time required to enable write operations | |
Write Disable Time | tWDS | 0.0 | 0.1 | μs | Time required to disable write operations | |
Data Hold Time | tDH | 6.0 | 8.0 | ns | Time data must be held after clock edge | |
Data Setup Time | tDS | 6.0 | 8.0 | ns | Time data must be stable before clock edge | |
Address Setup Time | tAS | 6.0 | 8.0 | ns | Time address must be stable before clock edge | |
Address Hold Time | tAH | 6.0 | 8.0 | ns | Time address must be held after clock edge | |
Command Setup Time | tCS | 6.0 | 8.0 | ns | Time command must be stable before clock edge | |
Command Hold Time | tCH | 6.0 | 8.0 | ns | Time command must be held after clock edge | |
Chip Enable Setup Time | tCES | 6.0 | 8.0 | ns | Time chip enable must be stable before clock edge | |
Chip Enable Hold Time | tCEH | 6.0 | 8.0 | ns | Time chip enable must be held after clock edge | |
Write Protect Setup Time | tWPS | 6.0 | 8.0 | ns | Time write protect must be stable before clock edge | |
Write Protect Hold Time | tWPH | 6.0 | 8.0 | ns | Time write protect must be held after clock edge | |
Reset Time | tRST | 0.0 | 1.0 | μs | Time required for reset operation | |
Power-on Reset Time | tPON | 0.0 | 1.0 | μs | Time required for power-on reset | |
Temperature Range | Toper | -40 | 85 | °C | Operating temperature range | |
Storage Temperature Range | Tstg | -40 | 125 | °C | Storage temperature range |
Instructions for Using S25FL128SAIF00:
Power Supply:
- Ensure the supply voltage (VCC) is within the specified range of 2.7V to 3.6V.
Initialization:
- Apply a valid reset sequence by toggling the RESET pin or using the software reset command.
- Set the chip enable (CE) low to activate the device.
Read Operation:
- Set CE low.
- Provide the read command (e.g., 0x03 for standard read).
- Provide the starting address.
- Clock in the data at the specified read access time (tR).
Write Operation:
- Set CE low.
- Provide the write enable (WREN) command (0x06).
- Provide the write command (e.g., 0x02 for page program).
- Provide the starting address.
- Provide the data to be written.
- Wait for the write to complete, which can take up to the specified page program time (tPP).
Erase Operation:
- Set CE low.
- Provide the write enable (WREN) command (0x06).
- Provide the block erase command (e.g., 0x52 for 64KB block erase).
- Provide the starting address of the block to be erased.
- Wait for the erase to complete, which can take up to the specified block erase time (tBERS).
Status Register Read:
- Set CE low.
- Provide the status register read command (0x05).
- Clock out the status register value to check the busy status (bit 0) and other flags.
Write Protect:
- Use the write protect (WP) pin to prevent accidental writes or erases.
- Set WP high to enable write protection.
Power Management:
- To reduce power consumption, set CE high when the device is not in use.
- Use the deep power-down mode (DPD) by providing the DPD command (0xB9) to further reduce power consumption.
Temperature Considerations:
- Ensure the operating temperature is within the specified range of -40°C to 85°C.
- Store the device within the storage temperature range of -40°C to 125°C.
Handling and Storage:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Store the device in a dry, cool environment to prevent moisture damage.
Inquiry - S25FL128SAIF00