Specifications
SKU: 11193156
Parameter | Description | Value | Unit |
---|---|---|---|
Type | SDRAM | - | - |
Density | Memory Density | 128 Mbit | - |
Organization | Data Width x Row Address x Column Address | 16M x 8 | - |
Voltage | Supply Voltage (Vcc) | 3.3 | V |
Voltage | Supply Voltage (Vccq) | 3.3 | V |
Operating Temperature | Industrial | -40 to +85 | °C |
Access Time | tAC (Access Time from CLK) | 7.5 | ns |
Cycle Time | tRC (Row Cycle Time) | 60 | ns |
Refresh | Refresh Cycle Time | 64 | ms |
CAS Latency | CAS Latency | 3 | - |
Package | Package Type | BGA | - |
Pin Count | Number of Pins | 48 | - |
Ball Pitch | Ball Pitch | 1.0 | mm |
Ball Size | Ball Diameter | 0.4 | mm |
Instructions:
Power Supply:
- Connect Vcc and Vccq to a stable 3.3V power supply.
- Ensure proper decoupling capacitors are placed close to the power pins to minimize noise.
Signal Integrity:
- Use controlled impedance traces for clock and data lines to maintain signal integrity.
- Terminate high-speed signals as required to prevent reflections.
Clock Signal:
- Provide a clean, stable clock signal to the CLK pin.
- The clock frequency should be within the specified range to avoid timing violations.
Address and Control Signals:
- Apply address and control signals (e.g., RAS#, CAS#, WE#) according to the timing diagrams provided in the datasheet.
- Ensure setup and hold times are met for all signals.
Data Signals:
- Data inputs (DQ) should be driven with valid levels during write operations.
- Data outputs (DQ) should be sampled at the appropriate time during read operations.
Refresh:
- Implement a refresh cycle every 64 milliseconds to maintain data integrity.
- Use either auto-refresh or self-refresh modes as per the application requirements.
Temperature Considerations:
- Operate the device within the specified temperature range (-40°C to +85°C).
- Ensure adequate cooling if operating in high-temperature environments.
Handling:
- Handle the device with care to avoid damage to the BGA balls.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
Testing:
- Perform functional tests to verify the correct operation of the SDRAM.
- Use test patterns and memory test algorithms to ensure data integrity and reliability.
For detailed specifications and advanced usage, refer to the official datasheet of the MT48LC8M16A2TG-75F.
(For reference only)Inquiry - MT48LC8M16A2TG-75F