Share:


MT48LC8M16A2TG-75F

Specifications

SKU: 11193156

BUY MT48LC8M16A2TG-75F https://www.utsource.net/itm/p/11193156.html

Parameter Description Value Unit
Type SDRAM - -
Density Memory Density 128 Mbit -
Organization Data Width x Row Address x Column Address 16M x 8 -
Voltage Supply Voltage (Vcc) 3.3 V
Voltage Supply Voltage (Vccq) 3.3 V
Operating Temperature Industrial -40 to +85 °C
Access Time tAC (Access Time from CLK) 7.5 ns
Cycle Time tRC (Row Cycle Time) 60 ns
Refresh Refresh Cycle Time 64 ms
CAS Latency CAS Latency 3 -
Package Package Type BGA -
Pin Count Number of Pins 48 -
Ball Pitch Ball Pitch 1.0 mm
Ball Size Ball Diameter 0.4 mm

Instructions:

  1. Power Supply:

    • Connect Vcc and Vccq to a stable 3.3V power supply.
    • Ensure proper decoupling capacitors are placed close to the power pins to minimize noise.
  2. Signal Integrity:

    • Use controlled impedance traces for clock and data lines to maintain signal integrity.
    • Terminate high-speed signals as required to prevent reflections.
  3. Clock Signal:

    • Provide a clean, stable clock signal to the CLK pin.
    • The clock frequency should be within the specified range to avoid timing violations.
  4. Address and Control Signals:

    • Apply address and control signals (e.g., RAS#, CAS#, WE#) according to the timing diagrams provided in the datasheet.
    • Ensure setup and hold times are met for all signals.
  5. Data Signals:

    • Data inputs (DQ) should be driven with valid levels during write operations.
    • Data outputs (DQ) should be sampled at the appropriate time during read operations.
  6. Refresh:

    • Implement a refresh cycle every 64 milliseconds to maintain data integrity.
    • Use either auto-refresh or self-refresh modes as per the application requirements.
  7. Temperature Considerations:

    • Operate the device within the specified temperature range (-40°C to +85°C).
    • Ensure adequate cooling if operating in high-temperature environments.
  8. Handling:

    • Handle the device with care to avoid damage to the BGA balls.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
  9. Testing:

    • Perform functional tests to verify the correct operation of the SDRAM.
    • Use test patterns and memory test algorithms to ensure data integrity and reliability.

For detailed specifications and advanced usage, refer to the official datasheet of the MT48LC8M16A2TG-75F.

(For reference only)

 Inquiry - MT48LC8M16A2TG-75F