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Specifications
SKU: 11193327
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| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Part number of the device | M5218AFP | - |
| Type | Type of device | EEPROM | - |
| Memory Size | Total memory capacity | 64 Kbits (8 K x 8) | - |
| Operating Voltage | Supply voltage range | 2.7 to 5.5 | V |
| Operating Temperature | Temperature range for operation | -40 to +85 | °C |
| Standby Current | Current consumption in standby mode | 1 μA (max) | μA |
| Write Cycle Time | Time required to complete a write cycle | 5 ms (max) | ms |
| Data Retention | Duration data is retained without power | 10 years (min) | years |
| Write Cycles | Number of write cycles the device can endure | 1,000,000 (min) | - |
| Package Type | Type of package | DIP-8 | - |
| Pin Configuration | Pin configuration details | See Pin Diagram | - |
| Access Time | Time required to access data | 45 ns (max) | ns |
| Write Protect | Feature to protect against accidental writes | WP pin | - |
| Organization | Memory organization | 8K x 8 | - |
Instructions
Power Supply:
- Ensure the supply voltage is within the specified range of 2.7V to 5.5V.
- Connect the VCC pin to the positive supply and GND to the ground.
Pin Configuration:
- Refer to the pin diagram for correct connections.
- VCC: Power supply
- GND: Ground
- A0-A12: Address lines
- D0-D7: Data lines
- OE: Output Enable (active low)
- WE: Write Enable (active low)
- CE: Chip Enable (active low)
- WP: Write Protect (active high)
Read Operation:
- Set CE and OE low to enable the chip and output.
- Apply the desired address to the address lines.
- Data will be available on the data lines after the access time.
Write Operation:
- Set CE and WE low to enable the chip and initiate a write cycle.
- Apply the desired address to the address lines.
- Apply the data to be written to the data lines.
- Set WE high to complete the write cycle. The write cycle time should not exceed 5 ms.
Write Protect:
- Set the WP pin high to prevent any write operations.
- Setting WP low allows write operations.
Standby Mode:
- Set CE high to put the device in standby mode, reducing current consumption to 1 μA max.
Storage and Handling:
- Store the device in a dry environment to avoid moisture damage.
- Handle with care to avoid static discharge, which can damage the device.
Data Retention:
- Data retention is guaranteed for at least 10 years under proper storage conditions.
Endurance:
- The device can withstand up to 1,000,000 write cycles.
Pin Diagram:
- Refer to the datasheet for the detailed pin diagram and physical dimensions.
Inquiry - M5218AFP
