Instructions for Use:

1. Reverse Bias Application:

   • Apply reverse bias voltage across the diode to utilize its breakdown voltage characteristic.
   • Ensure the reverse voltage does not exceed the specified maximum reverse breakdown voltage (V_BR).

2. Forward Bias Application:

   • When applying forward bias, ensure the current is limited to avoid exceeding the power dissipation limit (P_D).
   • The forward voltage drop (V_F) should be considered in circuit design.

3. Temperature Considerations:

   • Operate the diode within the specified operating temperature range (T_OP) to ensure reliable performance.
   • Store the diode within the storage temperature range (T_STG) to prevent damage.

4. Capacitance:

   • The capacitance (C_J) at 1 MHz is typically 4 pF. This value should be taken into account when designing circuits that are sensitive to capacitance.

5. Power Dissipation:

   • The maximum power dissipation (P_D) is 200 mW. Ensure adequate heat sinking or cooling if the diode will be operating near this limit.

6. Handling:

   • Handle the diode with care to avoid mechanical damage.
   • Use appropriate ESD (Electrostatic Discharge) protection measures to prevent damage from static electricity.

7. Mounting:

   • Follow recommended soldering profiles and temperatures to avoid thermal damage during assembly.
   • Ensure proper orientation of the diode during mounting to avoid incorrect polarity connections.