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MMBFJ113

Specifications

SKU: 11194003

BUY MMBFJ113 https://www.utsource.net/itm/p/11194003.html

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 50 V
Collector-Base Voltage VCBO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Base Current IB 20 mA
Power Dissipation PT 625 mW
Operating Junction Temperature TJ -55 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C
Transition Frequency fT 300 MHz
DC Current Gain (min) hFE 100 -
DC Current Gain (max) hFE 600 -

Instructions for Use:

  1. Handling Precautions:

    • Avoid excessive mechanical stress on the leads.
    • Handle with care to prevent damage to the device.
  2. Mounting:

    • Ensure proper heat sinking if operating at high power levels.
    • Soldering temperature should not exceed 260°C for more than 10 seconds.
  3. Biasing:

    • Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
    • Use appropriate biasing circuits to maintain stable operation.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the recommended operating conditions to ensure reliable performance.
  5. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from direct sunlight and extreme temperatures.
  6. Testing:

    • Use appropriate test equipment to verify the parameters before and after installation.
    • Follow standard testing procedures to ensure the device is functioning correctly.
(For reference only)

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