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Specifications
SKU: 11194250
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| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Supply Voltage | VCC | 2.7 | - | 5.5 | V | - |
| Continuous Drain Current | ID(cont) | - | 1.0 | - | A | @ TA = 25°C, VGS = 4.5V |
| Peak Pulse Current | ID(peak) | - | 1.8 | - | A | @ TC = 25°C, VGS = 4.5V, tP = 1ms, Duty Cycle = 1% |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Drain-Source Breakdown Voltage | VDS(off) | - | 30 | - | V | @ ID = 1mA, VGS = 0V |
| Gate Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.5 | V | @ ID = 250μA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.5 | - | Ω | @ VGS = 4.5V, ID = 1A, TA = 25°C |
| Input Capacitance | Ciss | - | 60 | - | pF | @ VDS = 10V, f = 1MHz |
| Output Capacitance | Coss | - | 20 | - | pF | @ VDS = 10V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 10 | - | pF | @ VDS = 10V, f = 1MHz |
| Junction Temperature | TJ | -55 | - | 150 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Supply Voltage (VCC):
- Ensure the supply voltage is within the range of 2.7V to 5.5V to avoid damage to the device.
Continuous Drain Current (ID(cont)):
- The maximum continuous drain current is 1.0A at 25°C ambient temperature. Ensure adequate heat dissipation for higher temperatures or currents.
Peak Pulse Current (ID(peak)):
- The device can handle peak pulse currents up to 1.8A for short durations (1ms, 1% duty cycle). Ensure that the pulse conditions do not exceed these limits.
Gate-Source Voltage (VGS):
- The gate-source voltage should not exceed ±20V to prevent damage to the gate oxide.
Drain-Source Breakdown Voltage (VDS(off)):
- The drain-source breakdown voltage is 30V. Do not exceed this voltage when the device is off.
Gate Threshold Voltage (VGS(th)):
- The gate threshold voltage ranges from 1.0V to 2.5V. Ensure the gate voltage is above this range to fully turn on the device.
On-State Resistance (RDS(on)):
- The on-state resistance is typically 0.5Ω at 4.5V gate-source voltage and 1A drain current. This value can affect power dissipation and efficiency.
Capacitances (Ciss, Coss, Crss):
- These capacitances affect the switching speed and performance. Use appropriate gate drive circuits to minimize switching losses.
Temperature Ranges:
- The junction temperature should not exceed 150°C. The storage temperature range is -55°C to 150°C.
Handling Precautions:
- Handle the device with care to avoid static damage. Use proper ESD protection measures during handling and assembly.
Mounting:
- Ensure proper mounting and thermal management to maintain device reliability and performance. Use a heatsink if necessary to dissipate heat effectively.
Testing:
- Follow the recommended test conditions and procedures to ensure accurate characterization and reliable operation.
Inquiry - NTR2101PT1G
