BUY H25R1202 https://www.utsource.net/itm/p/11195934.html

Description: The H25R1202 is a three-phase, high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module from Infineon. Features: High-voltage operation up to 1200V Low switching losses Low gate charge High current capability Low thermal resistance High surge current capability Low inductance Short-circuit protection Applications: Motor drives Uninterruptible power supplies Solar inverters Welding equipment Industrial automation Lighting ballasts (For reference only)