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Specifications
SKU: 11196648
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| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 200 | - | V | |
| Gate-Source Voltage | VGS | - | ±20 | - | V | |
| Continuous Drain Current | ID | VDS = 25V, TA = 25°C | - | 10 | - | A |
| Pulse Drain Current | ID(p) | VDS = 25V, TC = 25°C, tp = 10ms, Duty Cycle = 1% | - | 30 | - | A |
| Gate-Source Threshold Voltage | VGS(th) | ID = 250μA, TA = 25°C | 2.0 | 4.0 | 6.0 | V |
| On-State Resistance | RDS(on) | VGS = 10V, ID = 5A, TA = 25°C | - | 1.2 | - | Ω |
| Input Capacitance | Ciss | VDS = 15V, f = 1MHz | - | 1100 | - | pF |
| Output Capacitance | Coss | VDS = 15V, f = 1MHz | - | 330 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 15V, VGS = 0V, f = 1MHz | - | 170 | - | pF |
| Total Gate Charge | QG | VDS = 25V, VGS = 10V, ID = 5A | - | 40 | - | nC |
| Gate-Source Charge | QGS | VDS = 25V, VGS = 10V, ID = 5A | - | 10 | - | nC |
| Gate-Drain Charge | QGD | VDS = 25V, VGS = 10V, ID = 5A | - | 30 | - | nC |
| Drain-Source Breakdown Voltage | VBDS | ID = 250μA, TA = 25°C | - | 200 | - | V |
| Power Dissipation | PD | TC = 25°C | - | 125 | - | W |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature Range | TSTG | -65 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The PMEG2010EA is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
Mounting and Assembly:
- Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure reliable performance.
Operating Conditions:
- Operate within the specified temperature range to avoid thermal runaway and ensure long-term reliability.
- Monitor the junction temperature to ensure it does not exceed the maximum rated value.
Gate Drive:
- Use a gate drive circuit that can provide sufficient current to charge and discharge the gate capacitance quickly, ensuring fast switching times and minimizing switching losses.
- Ensure the gate voltage is within the specified range to avoid overdriving the device and causing damage.
Testing:
- When testing the device, use the test conditions specified in the parameter table to obtain accurate measurements.
- Use appropriate test equipment and techniques to avoid introducing errors or damaging the device.
Storage:
- Store the device in a dry, cool environment to prevent moisture absorption and degradation.
- Keep the device in its original packaging until ready for use to protect against static and physical damage.
Inquiry - PMEG2010EA
