Share:
Specifications
SKU: 11199686
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 30 | - | V | |
| Gate-Source Voltage | VGS | -15 | 0 | 8 | V | |
| Continuous Drain Current | ID (DC) | - | 3.7 | - | A | TC = 25°C |
| Continuous Drain Current | ID (DC) | - | 2.7 | - | A | TC = 70°C |
| Pulse Drain Current | ID (Pulse) | - | 9.3 | - | A | TC = 25°C, tP = 10 μs, Duty Cycle = 1% |
| Power Dissipation | Ptot | - | 1.1 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Ambient | RθJA | - | 125 | - | °C/W | |
| Input Capacitance | Ciss | - | 310 | - | pF | VDS = 10 V, f = 1 MHz |
| Output Capacitance | Coss | - | 110 | - | pF | VDS = 10 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 50 | - | pF | VDS = 10 V, f = 1 MHz |
| Gate Charge | QG | - | 12 | - | nC | VDS = 10 V, VGS = 10 V, ID = 3.7 A |
| Threshold Voltage | VGS(th) | 0.8 | 1.2 | 1.6 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | 0.075 | - | Ω | VGS = 10 V, ID = 3.7 A, TJ = 25°C |
| On-State Resistance | RDS(on) | - | 0.12 | - | Ω | VGS = 4.5 V, ID = 2.7 A, TJ = 25°C |
Instructions for Use:
Operating Conditions:
- Ensure that the drain-source voltage (VDS) does not exceed 30 V.
- The gate-source voltage (VGS) should be within -15 V to 8 V.
- Do not exceed the continuous drain current (ID) limits based on the case temperature (TC).
Thermal Management:
- Keep the junction temperature (TJ) below 150°C to avoid thermal damage.
- Use appropriate heat sinks or cooling methods if operating at high power levels.
Capacitance and Gate Charge:
- Consider the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the gate drive circuit.
- The gate charge (QG) affects the switching speed; ensure the gate driver can supply sufficient current.
Threshold Voltage and On-State Resistance:
- The threshold voltage (VGS(th)) determines the minimum gate voltage required to turn the MOSFET on.
- The on-state resistance (RDS(on)) affects the power dissipation; use the appropriate VGS to minimize it.
Storage and Handling:
- Store the device in a dry, cool place with temperatures between -55°C and 150°C.
- Handle the device with care to avoid static discharge, which can damage the sensitive components.
Mounting:
- Ensure proper mounting to the PCB to maintain good electrical and thermal connections.
- Follow the recommended soldering profile to avoid damage during assembly.
Testing:
- Test the device under controlled conditions to verify its performance and ensure it meets the specified parameters.
Inquiry - IRLML6244TRPBF
