Instructions for Use:

1. Power Supply:

   • Connect Vcc to the positive supply voltage (2.5V to 5.5V).
   • Connect GND to the ground.

2. Address Lines (A0-A7):

   • These lines are used to select the address of the memory location to be read from or written to.

3. Data Lines (I/O0-I/O7):

   • These lines are bidirectional and are used to transfer data to and from the memory.

4. Control Signals:

   • /CS (Chip Select): Low to enable the chip.
   • /WE (Write Enable): Low to initiate a write operation.
   • /OE (Output Enable): Low to enable read operations.

5. Write Operation:

   • Set /CS and /WE low.
   • Apply the desired address on A0-A7.
   • Apply the data to be written on I/O0-I/O7.
   • Hold /WE low for at least 5 ms to complete the write cycle.
   • Return /WE high to complete the write operation.

6. Read Operation:

   • Set /CS and /OE low.
   • Apply the desired address on A0-A7.
   • The data will appear on I/O0-I/O7 after a short access time.
   • Return /OE high to disable the output.

7. Standby Mode:

   • To minimize power consumption, set /CS high when the device is not in use.

8. Data Retention:

   • Ensure that the device is not exposed to excessive voltage or temperature to maintain data retention over the specified period.

9. Endurance:

   • The device can withstand up to 1,000,000 write/read cycles without degradation in performance.

10. Handling Precautions:

    • Handle the device with care to avoid static discharge, which can damage the device.
    • Follow proper soldering techniques to ensure reliable connections.