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2SK2150

Specifications

SKU: 11201622

BUY 2SK2150 https://www.utsource.net/itm/p/11201622.html

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage V(DS) - 300 - V
Gate-Source Voltage V(GS) - ±20 - V
Drain Current I(D) - 5 - A
Gate Threshold Voltage V(GS(th)) 1.0 2.0 4.0 V
On-State Resistance R(DS(on)) - 0.8 - Ω
Power Dissipation P(TOT) - 75 - W
Junction Temperature T(j) - - 150 °C
Storage Temperature T(stg) -55 - 150 °C

Instructions for Using 2SK2150:

  1. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Use appropriate ESD (Electrostatic Discharge) protection measures to prevent damage from static electricity.
  2. Mounting and Soldering:

    • Ensure proper alignment of the device during mounting.
    • Use a soldering iron with a temperature setting appropriate for the device (typically 260°C or less).
    • Avoid overheating the device during soldering, as excessive heat can damage the internal components.
  3. Biasing and Operation:

    • Apply the gate-source voltage (V(GS)) within the specified range to ensure reliable operation.
    • Monitor the drain current (I(D)) to ensure it does not exceed the maximum rating.
    • Keep the junction temperature (T(j)) within the safe operating range to prevent thermal damage.
  4. Testing:

    • Use a multimeter or an oscilloscope to verify the device parameters such as V(DS), V(GS), and I(D).
    • Test the on-state resistance (R(DS(on))) to ensure the device is functioning correctly.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
    • Follow the storage temperature guidelines to ensure long-term reliability.
  6. Troubleshooting:

    • If the device fails to operate, check for proper biasing and connections.
    • Verify that the power supply and load are within the specified limits.
    • If issues persist, consult the datasheet or contact the manufacturer for further assistance.
(For reference only)

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