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2SC5242OTU

Specifications

SKU: 11201679

BUY 2SC5242OTU https://www.utsource.net/itm/p/11201679.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 600 V
Collector-Base Voltage VCBO - - 600 V
Emitter-Base Voltage VEBO - - 7 V
Continuous Collector Current Ic - - 15 A
DC Current Gain hFE 10 50 200 -
Transition Frequency fT - 100 - MHz
Power Dissipation PD - - 180 W
Junction Temperature TJ -40 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use insulated mounting hardware to prevent electrical shorts.
  2. Biasing:

    • Set the base current (Ib) to achieve the desired collector current (Ic) based on the DC current gain (hFE).
    • Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCEO), collector-base voltage (VCBO), and emitter-base voltage (VEBO).
    • Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
  4. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress or static discharge.
  5. Testing:

    • Use appropriate test equipment and procedures to verify the device parameters.
    • Perform tests at room temperature unless otherwise specified.
  6. Soldering:

    • Use a controlled soldering process to avoid exceeding the maximum junction temperature.
    • Allow the device to cool down before testing or operation.
(For reference only)

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