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SPA20N65C3

Specifications

SKU: 11201749

BUY SPA20N65C3 https://www.utsource.net/itm/p/11201749.html

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - 650 - V
Gate-Source Voltage VGS -15 0 15 V
Continuous Drain Current (TC = 25°C) ID - 20 - A
Continuous Drain Current (TC = 100°C) ID - 14 - A
Pulse Drain Current (TC = 25°C, tp = 10 μs) IDpeak - 80 - A
Power Dissipation (TC = 25°C) PTOT - 250 - W
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C
Total Device Dissipation (TC = 25°C) Ptot - 250 - W
Thermal Resistance, Junction to Case RθJC - 0.7 - °C/W
Input Capacitance Ciss - 2300 - pF VGS = 0 V, f = 1 MHz
Output Capacitance Coss - 190 - pF VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 220 - pF VDS = 400 V, f = 1 MHz
Gate Charge QG - 120 - nC VGS = 15 V, VDS = 400 V, ID = 10 A
Turn-On Delay Time td(on) - 30 - ns VGS = 15 V, VDS = 400 V, ID = 10 A, RG = 2 Ω
Rise Time tr - 35 - ns VGS = 15 V, VDS = 400 V, ID = 10 A, RG = 2 Ω
Turn-Off Delay Time td(off) - 30 - ns VGS = 15 V, VDS = 400 V, ID = 10 A, RG = 2 Ω
Fall Time tf - 40 - ns VGS = 15 V, VDS = 400 V, ID = 10 A, RG = 2 Ω

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is mounted on a suitable heatsink to maintain the junction temperature within safe limits.
    • Handle the device with care to avoid damage to the pins and the die.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating of ±15 V.
    • Use appropriate gate resistors (RG) to control switching times and reduce electromagnetic interference (EMI).
  3. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
    • Use thermal paste or thermal interface materials (TIM) to improve heat transfer between the device and the heatsink.
  4. Power Dissipation:

    • Calculate the power dissipation (PTOT) to ensure it remains within the rated limits.
    • Consider derating the current at higher temperatures to avoid exceeding the maximum power dissipation.
  5. Capacitance and Switching:

    • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in circuit design.
    • Use the gate charge (QG) to determine the required gate drive current.
  6. Storage and Operating Temperatures:

    • Store the device within the specified storage temperature range (-55°C to 150°C).
    • Operate the device within the junction temperature range (- to 150°C).
  7. Testing and Troubleshooting:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Use a multimeter or oscilloscope to monitor voltages and currents during operation.
    • Refer to the datasheet for specific test procedures and troubleshooting tips.
(For reference only)

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