Specifications
SKU: 11206832
TVS Diode
Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum Repetitive Peak Reverse Voltage | VRRM | 22 | V |
Maximum DC Working Voltage | VRWM | 18 | V |
Maximum Peak Pulse Current (tp=10ms) | Ipp | 37.5 | A |
Maximum Clamping Voltage at IPP | VC | 42.2 | V |
Maximum RMS Current (Non-Repetitive) | IRMS | 1.1 | A |
Junction Operating Temperature Range | TJ | -65 to 150 | °C |
Storage Temperature Range | TSTG | -65 to 150 | °C |
Capacitance (f=1 MHz) | C | 1000 | pF |
Leakage Current at VRWM (TJ=25°C) | IR | 1 | μA |
Instructions for Use:
- Voltage Rating: Ensure that the maximum repetitive peak reverse voltage (VRRM) does not exceed 22V to avoid damage to the device.
- Working Voltage: The maximum DC working voltage (VRWM) should not exceed 18V to ensure reliable operation.
- Current Handling: The maximum peak pulse current (Ipp) is 37.5A for a pulse duration of 10ms. Exceeding this value can lead to device failure.
- Clamping Voltage: At the maximum peak pulse current (IPP), the clamping voltage (VC) is 42.2V. Design your circuit to handle this voltage level.
- RMS Current: The maximum RMS current (IRMS) is 1.1A for non-repetitive conditions. For repetitive conditions, ensure the current is within safe limits.
- Temperature Range: The junction operating temperature (TJ) and storage temperature (TSTG) range from -65°C to 150°C. Ensure the device operates within these limits.
- Capacitance: The capacitance at 1 MHz is 1000 pF. Consider this when designing circuits where capacitance affects performance.
- Leakage Current: The leakage current at VRWM and 25°C is 1 μA. This should be accounted for in low-current applications.
Handling and Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle with care to avoid mechanical stress or damage to the leads.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Inquiry - P6KE22CA