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Specifications
SKU: 11215287
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 500 | - | V | - |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 11.5 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 7.3 | - | A | TC = 100°C |
| Pulse Drain Current | ID(p) | - | 34 | - | A | tp = 10 μs, IG = 1 A |
| Total Power Dissipation | PTOT | - | 130 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature Range | TSTG | -65 | - | 150 | °C | - |
Instructions for Use:
Handling Precautions:
- The IRFR9024NTRLPBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.
- Avoid exceeding the maximum ratings to prevent damage to the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary, especially when operating at high power levels.
- Follow recommended PCB layout guidelines to minimize parasitic inductance and resistance.
Biasing:
- Apply a gate-source voltage (VGS) within the specified range to turn the MOSFET on or off.
- For optimal performance, use a gate resistor to control the rise and fall times of the gate voltage.
Operating Conditions:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Operate the device within the specified temperature range (TSTG) for reliable performance.
Testing:
- Use a suitable test setup to verify the parameters such as drain-source voltage, drain current, and power dissipation.
- Refer to the datasheet for detailed test conditions and methods.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against moisture and static electricity.
For more detailed information, refer to the official datasheet provided by the manufacturer.
(For reference only)Inquiry - IRFR9024NTRLPBF
