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IRF624SPBF

Specifications

SKU: 11215601

BUY IRF624SPBF https://www.utsource.net/itm/p/11215601.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 100 V Continuous
Gate-Source Voltage VGS -20 - 20 V Continuous
Continuous Drain Current ID - 15 30 A TC = 25°C
- 9.6 19.2 A TC = 100°C
Pulse Drain Current ID(p) - 50 100 A tp = 10 ms, TC = 25°C
Total Power Dissipation PTOT - - 200 W TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance RθJC - 0.5 - °C/W Junction to Case

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings listed in the table.
    • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure good thermal management by using a heatsink if necessary.
    • Apply thermal paste between the device and heatsink for better heat dissipation.
  3. Gate Drive:

    • The gate should be driven with a voltage between the minimum and maximum VGS values.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  4. Continuous Operation:

    • For continuous operation, ensure that the drain current does not exceed the typical value at the specified case temperature.
    • Monitor the junction temperature to avoid overheating.
  5. Pulse Operation:

    • For pulse operation, ensure that the pulse duration and frequency do not exceed the specified limits to avoid thermal stress.
  6. Storage:

    • Store the device in a dry, cool place within the storage temperature range to prevent damage.
  7. Testing:

    • When testing the device, use a controlled environment to avoid exceeding the maximum ratings.
    • Use appropriate test equipment and follow safety guidelines.
  8. Soldering:

    • Follow recommended soldering profiles to avoid thermal shock and damage to the device.
    • Allow the device to cool down before testing after soldering.
(For reference only)

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