Specifications
SKU: 11215601
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 100 | V | Continuous |
Gate-Source Voltage | VGS | -20 | - | 20 | V | Continuous |
Continuous Drain Current | ID | - | 15 | 30 | A | TC = 25°C |
- | 9.6 | 19.2 | A | TC = 100°C | ||
Pulse Drain Current | ID(p) | - | 50 | 100 | A | tp = 10 ms, TC = 25°C |
Total Power Dissipation | PTOT | - | - | 200 | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Thermal Resistance | RθJC | - | 0.5 | - | °C/W | Junction to Case |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings listed in the table.
- Use appropriate ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary.
- Apply thermal paste between the device and heatsink for better heat dissipation.
Gate Drive:
- The gate should be driven with a voltage between the minimum and maximum VGS values.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Continuous Operation:
- For continuous operation, ensure that the drain current does not exceed the typical value at the specified case temperature.
- Monitor the junction temperature to avoid overheating.
Pulse Operation:
- For pulse operation, ensure that the pulse duration and frequency do not exceed the specified limits to avoid thermal stress.
Storage:
- Store the device in a dry, cool place within the storage temperature range to prevent damage.
Testing:
- When testing the device, use a controlled environment to avoid exceeding the maximum ratings.
- Use appropriate test equipment and follow safety guidelines.
Soldering:
- Follow recommended soldering profiles to avoid thermal shock and damage to the device.
- Allow the device to cool down before testing after soldering.
Inquiry - IRF624SPBF