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Specifications
SKU: 11216958
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 55 | - | V | - |
| Gate-Source Voltage | VGS | - | ±20 | - | V | - |
| Continuous Drain Current | ID | - | - | 87 | A | TC = 25°C |
| Continuous Drain Current | ID | - | - | 56 | A | TC = 100°C |
| Pulse Drain Current | ID(p) | - | - | 180 | A | tp = 10 ms, TC = 25°C |
| Gate Charge | QG | - | 90 | - | nC | VGS = 10V, ID = 50A |
| Input Capacitance | Ciss | - | 1700 | - | pF | VDS = 25V, f = 1 MHz |
| Output Capacitance | Coss | - | 360 | - | pF | VDS = 25V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | VDS = 25V, f = 1 MHz |
| Drain-Source On-State Resistance | RDS(on) | - | 5.0 | - | mΩ | VGS = 10V, ID = 50A, TC = 25°C |
| Gate-Source Threshold Voltage | VGS(th) | 2.0 | - | 4.0 | V | ID = 250 μA, TA = 25°C |
| Power Dissipation | PTOT | - | - | 160 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is handled with care to avoid mechanical damage.
- Use appropriate thermal management techniques to maintain the junction temperature within the specified limits.
Electrical Connections:
- Connect the gate and source pins with low-inductance paths to minimize switching losses.
- Use a suitable gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Ensure adequate heat sinking to keep the junction temperature below the maximum rated value.
- Monitor the temperature during operation to prevent thermal runaway.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to ensure proper turn-on and turn-off.
- Use a gate driver circuit to provide sufficient current to charge and discharge the gate capacitance quickly.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive drain current.
- Use a current-limiting resistor or a current-sensing circuit to monitor the drain current.
Storage and Handling:
- Store the device in a dry, cool place away from direct sunlight.
- Follow ESD (Electrostatic Discharge) precautions to avoid damaging the device.
Testing:
- Test the device under controlled conditions to verify its performance before integrating it into the final application.
- Use a curve tracer or a similar test equipment to measure the device parameters accurately.
By following these guidelines, you can ensure reliable and efficient operation of the IRL1404S MOSFET.
(For reference only)Inquiry - IRL1404S
