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Specifications
SKU: 11217384
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 30 | - | V |
| Gate-Source Voltage | VGS | -15 | - | 15 | V |
| Continuous Drain Current | ID | - | 3.0 | - | A |
| Pulse Drain Current (tp = 10 μs, duty cycle = 1%) | ID(pulsed) | - | 12 | - | A |
| Power Dissipation | Ptot | - | - | 45 | W |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature | Tstg | -55 | - | 150 | °C |
| Thermal Resistance, Junction to Case | RθJC | - | 1.0 | - | °C/W |
Instructions for Use:
Handling Precautions:
- The IRF3703 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
- Avoid exceeding the maximum ratings specified in the table to prevent damage.
Mounting:
- Ensure good thermal management by using a heatsink if necessary, especially when operating at high power levels.
- Apply thermal compound between the device and heatsink to improve heat transfer.
Biasing:
- Apply a gate-source voltage (VGS) within the specified range to control the drain current (ID).
- For optimal performance, keep VGS within the typical operating range of 4 to 10V.
Operation:
- The device can be used in both continuous and pulsed modes. Ensure that the pulse duration and duty cycle do not exceed the pulsed current rating.
- Monitor the junction temperature (TJ) to avoid overheating, which can reduce the lifespan of the device.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range to maintain its reliability.
Testing:
- When testing the device, use a suitable test setup to ensure accurate measurements and avoid damaging the device.
- Refer to the datasheet for specific test conditions and procedures.
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