Specifications
SKU: 11218843
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 600 | V | Maximum voltage between collector and emitter with base open |
Emitter-Collector Voltage | VEBO | - | - | 7 | V | Maximum voltage between emitter and base with collector open |
Base-Emitter Voltage | VBE | - | 1.5 | 2.5 | V | Maximum voltage between base and emitter at specified conditions |
Collector Current | IC | - | - | 15 | A | Maximum continuous collector current |
Power Dissipation | PT | - | - | 125 | W | Maximum power dissipation at TA = 25°C |
Junction Temperature | TJ | - | - | 150 | °C | Maximum junction temperature |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | Operating temperature range for storage |
Transition Frequency | fT | - | 10 | - | MHz | Frequency at which gain is unity (hfe = 1) |
Instructions for Use:
Mounting:
- Ensure the transistor is mounted on a suitable heat sink to manage the maximum power dissipation.
- Use thermal compound to enhance heat transfer between the transistor and the heat sink.
Biasing:
- Apply the base-emitter voltage (VBE) carefully to avoid exceeding the maximum ratings.
- Use appropriate resistors to limit the base current (IB) to ensure the transistor operates within safe limits.
Operating Conditions:
- Keep the junction temperature (TJ) below the maximum rating to prevent thermal runaway and damage.
- Ensure the ambient temperature (TA) is within the specified operating range to maintain reliable performance.
Storage:
- Store the transistor in a dry, cool place within the specified storage temperature range to prevent degradation.
Handling:
- Handle the transistor with care to avoid mechanical damage or static discharge, which can affect its performance.
Testing:
- Use a multimeter or a transistor tester to verify the parameters before installation.
- Test the circuit under controlled conditions to ensure all components are functioning correctly.
Inquiry - 2SB892S-AE