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2SB892S-AE

Specifications

SKU: 11218843

BUY 2SB892S-AE https://www.utsource.net/itm/p/11218843.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCEO - - 600 V Maximum voltage between collector and emitter with base open
Emitter-Collector Voltage VEBO - - 7 V Maximum voltage between emitter and base with collector open
Base-Emitter Voltage VBE - 1.5 2.5 V Maximum voltage between base and emitter at specified conditions
Collector Current IC - - 15 A Maximum continuous collector current
Power Dissipation PT - - 125 W Maximum power dissipation at TA = 25°C
Junction Temperature TJ - - 150 °C Maximum junction temperature
Storage Temperature Range TSTG -55 - 150 °C Operating temperature range for storage
Transition Frequency fT - 10 - MHz Frequency at which gain is unity (hfe = 1)

Instructions for Use:

  1. Mounting:

    • Ensure the transistor is mounted on a suitable heat sink to manage the maximum power dissipation.
    • Use thermal compound to enhance heat transfer between the transistor and the heat sink.
  2. Biasing:

    • Apply the base-emitter voltage (VBE) carefully to avoid exceeding the maximum ratings.
    • Use appropriate resistors to limit the base current (IB) to ensure the transistor operates within safe limits.
  3. Operating Conditions:

    • Keep the junction temperature (TJ) below the maximum rating to prevent thermal runaway and damage.
    • Ensure the ambient temperature (TA) is within the specified operating range to maintain reliable performance.
  4. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range to prevent degradation.
  5. Handling:

    • Handle the transistor with care to avoid mechanical damage or static discharge, which can affect its performance.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the parameters before installation.
    • Test the circuit under controlled conditions to ensure all components are functioning correctly.
(For reference only)

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