Specifications
SKU: 11219332
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Breakdown Voltage | V(BR)CEO | - | 400 | - | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | - | 5 | - | V |
Collector-Base Breakdown Voltage | V(BR)CBO | - | 600 | - | V |
Collector Current (Continuous) | IC | - | 800 | - | mA |
Collector Current (Pulse) | ICM | - | 2000 | - | mA |
Base Current (Continuous) | IB | - | 80 | - | mA |
Base Current (Pulse) | IBM | - | 200 | - | mA |
Power Dissipation | Ptot | - | 1000 | - | mW |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Thermal Resistance, Junction to Case | RθJC | - | 150 | - | K/W |
Instructions for Using KSP13:
Handling Precautions:
- Avoid exposing the transistor to temperatures outside the specified range.
- Use appropriate static protection when handling the device.
Mounting:
- Ensure proper heat sinking if operating at high power levels.
- Follow recommended soldering profiles to avoid thermal shock.
Biasing:
- Ensure the base current is within the specified limits to avoid damage.
- Use a current-limiting resistor to protect the base-emitter junction.
Operation:
- Do not exceed the maximum collector current or power dissipation ratings.
- Monitor the junction temperature to prevent overheating.
Testing:
- Use a suitable multimeter or transistor tester to verify the functionality of the device.
- Perform tests under controlled conditions to ensure accurate results.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in anti-static packaging to prevent damage.
Soldering:
- Use a soldering iron with a temperature of 300°C to 350°C.
- Soldering time should not exceed 3 seconds per joint.
Applications:
- Suitable for general-purpose switching and amplification applications.
- Ideal for use in circuits requiring high voltage and moderate current handling.
Inquiry - KSP13