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KSP13

Specifications

SKU: 11219332

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Parameter Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - 400 - V
Emitter-Base Breakdown Voltage V(BR)EBO - 5 - V
Collector-Base Breakdown Voltage V(BR)CBO - 600 - V
Collector Current (Continuous) IC - 800 - mA
Collector Current (Pulse) ICM - 2000 - mA
Base Current (Continuous) IB - 80 - mA
Base Current (Pulse) IBM - 200 - mA
Power Dissipation Ptot - 1000 - mW
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Thermal Resistance, Junction to Case RθJC - 150 - K/W

Instructions for Using KSP13:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside the specified range.
    • Use appropriate static protection when handling the device.
  2. Mounting:

    • Ensure proper heat sinking if operating at high power levels.
    • Follow recommended soldering profiles to avoid thermal shock.
  3. Biasing:

    • Ensure the base current is within the specified limits to avoid damage.
    • Use a current-limiting resistor to protect the base-emitter junction.
  4. Operation:

    • Do not exceed the maximum collector current or power dissipation ratings.
    • Monitor the junction temperature to prevent overheating.
  5. Testing:

    • Use a suitable multimeter or transistor tester to verify the functionality of the device.
    • Perform tests under controlled conditions to ensure accurate results.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in anti-static packaging to prevent damage.
  7. Soldering:

    • Use a soldering iron with a temperature of 300°C to 350°C.
    • Soldering time should not exceed 3 seconds per joint.
  8. Applications:

    • Suitable for general-purpose switching and amplification applications.
    • Ideal for use in circuits requiring high voltage and moderate current handling.
(For reference only)

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