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2SA1182-Y

Specifications

SKU: 11220274

BUY 2SA1182-Y https://www.utsource.net/itm/p/11220274.html

Parameter Symbol Min Typ Max Unit Notes
Collector-Emitter Voltage VCE - - 45 V
Emitter-Base Voltage VEB -5.0 - - V Reverse
Collector Current IC - - 1.5 A Continuous
Power Dissipation PT - - 62.5 W At TA = 25°C
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Thermal Resistance, Junction to Case RθJC - 2.5 - °C/W

Instructions for Use:

  1. Handling Precautions:

    • Handle the transistor with care to avoid mechanical damage.
    • Avoid exposure to high temperatures and humidity.
    • Use proper static discharge precautions to prevent damage from ESD (Electrostatic Discharge).
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Tighten the mounting screws to the recommended torque to ensure good thermal contact.
  3. Biasing:

    • Ensure that the base-emitter voltage (VEB) does not exceed the maximum reverse voltage rating.
    • Use appropriate biasing circuits to maintain the collector current (IC) within the specified limits.
  4. Power Dissipation:

    • Calculate the power dissipation (PT) to ensure it does not exceed the maximum rating.
    • Use a heatsink if necessary to keep the junction temperature (TJ) below 150°C.
  5. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range (-65°C to 150°C).
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
    • Follow standard testing procedures to avoid damaging the device.
  7. Soldering:

    • Use a soldering iron with a temperature setting appropriate for the transistor.
    • Avoid prolonged heating during soldering to prevent damage to the device.

By following these instructions, you can ensure the reliable operation and longevity of the 2SA1182-Y transistor.

(For reference only)

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