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IS42S32200E-6TL

Specifications

SKU: 11221521

BUY IS42S32200E-6TL https://www.utsource.net/itm/p/11221521.html
IC DRAM 64M PARALLEL 86TSOP II
Parameter Description Value Unit
Device IS42S32200E-6TL
Type Synchronous DRAM (SDRAM)
Density Total Memory Capacity 32 Mbit (4 M x 8)
Organization Internal Organization 4M x 8
Supply Voltage (Vcc) Operating Supply Voltage 3.3 V
Supply Voltage (Vccq) I/O Supply Voltage 3.3 V
Operating Temperature Industrial Temperature Range -40 to +85 °C
Access Time (tAC) Access Time from Clock Edge 6.0 ns
Cycle Time (tRC) Row Cycle Time 60.0 ns
Refresh Cycle Time (tREF) Refresh Cycle Time 64.0 μs
Refresh Rate Refresh Rate 8192 cycles/s
Power Consumption (Active) Active Power Consumption 300 mW
Power Consumption (Standby) Standby Power Consumption 5 mW
Package Package Type TQFP-48
Pin Configuration Pin Count 48

Instructions for Use

  1. Power Supply:

    • Connect Vcc and Vccq to a stable 3.3V power supply.
    • Ensure that the power supply has sufficient decoupling capacitors to maintain stability during high-speed switching.
  2. Clock Signal:

    • Provide a stable clock signal to the CLK pin.
    • The clock frequency should be within the specified range to ensure proper operation.
  3. Address and Data Lines:

    • Connect the address lines (A0-A11) to the appropriate address bus.
    • Connect the data lines (DQ0-DQ7) to the data bus.
  4. Control Signals:

    • CS# (Chip Select): Low to enable the device.
    • RAS# (Row Address Strobe): Low to initiate a row address cycle.
    • CAS# (Column Address Strobe): Low to initiate a column address cycle.
    • WE# (Write Enable): Low to write data, high to read data.
    • DQM (Data Mask): Used to mask individual data lines during write operations.
  5. Refresh:

    • Perform refresh cycles at least once every 64 microseconds to maintain data integrity.
    • Use the auto-refresh command or self-refresh mode as needed.
  6. Initialization:

    • After power-up, perform a reset sequence to initialize the device.
    • Follow the device-specific initialization sequence as outlined in the datasheet.
  7. Timing:

    • Ensure all timing parameters (e.g., tAC, tRC, tREF) are met to avoid data corruption and ensure reliable operation.
  8. Thermal Management:

    • Ensure adequate cooling to keep the device within the specified temperature range.
    • Use heatsinks or other cooling methods if necessary.
  9. Handling:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD).
    • Follow ESD protection guidelines during handling and installation.
  10. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Use anti-static packaging when storing or transporting the device.

For detailed information and specific application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)

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