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Specifications
SKU: 11226129
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Device Identifier | G160N60UFD | - |
| Type | Device Type | N-Channel MOSFET | - |
| VDS (Max) | Drain-to-Source Voltage | 600 | V |
| VGS (Max) | Gate-to-Source Voltage | ±20 | V |
| ID (Max) | Continuous Drain Current | 160 | A |
| PTOT (Max) | Total Power Dissipation | 340 | W |
| RDS(on) (Typical) | On-State Resistance at VGS = 10V | 2.5 | mΩ |
| QG (Total) | Total Gate Charge | 320 | nC |
| QGD (Drain) | Gate-to-Drain Charge | 100 | nC |
| QGS (Source) | Gate-to-Source Charge | 70 | nC |
| td(on) | Turn-On Delay Time | 25 | ns |
| tr | Rise Time | 45 | ns |
| td(off) | Turn-Off Delay Time | 35 | ns |
| tf | Fall Time | 60 | ns |
| fT | Transition Frequency | 1.8 | MHz |
| Operating Temperature Range | Junction Temperature | -55 to +175 | °C |
| Storage Temperature Range | Storage Temperature | -65 to +175 | °C |
| Package | Package Type | TO-247-3L | - |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the high power dissipation.
- Use a thermal compound between the MOSFET and the heatsink for optimal heat transfer.
Biasing:
- Apply a gate-to-source voltage (VGS) within the specified range to control the MOSFET.
- Avoid exceeding the maximum VGS to prevent damage to the device.
Current Handling:
- Do not exceed the continuous drain current (ID) rating to avoid overheating and potential failure.
- Consider derating the current based on ambient temperature and cooling conditions.
Switching:
- Minimize switching losses by ensuring fast turn-on and turn-off times.
- Use appropriate gate drive circuits to achieve the required switching speeds.
Storage and Handling:
- Store the device in a dry, cool environment within the specified storage temperature range.
- Handle with care to avoid mechanical damage and static discharge.
Testing:
- Use a suitable test setup to verify the parameters before integrating into the final application.
- Refer to the datasheet for detailed testing procedures and recommended test conditions.
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