Specifications
SKU: 11227639
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 450 | V | |
Emitter-Base Voltage | VEB | - | - | 5 | V | |
Collector Current | IC | - | - | 15 | A | |
Base Current | IB | - | - | 3 | A | |
Power Dissipation | PT | - | - | 150 | W | TC = 25°C |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
Operating Junction Temperature | TJ | -55 | - | 150 | °C | |
Thermal Resistance, Junction to Case | RθJC | - | 1.5 | - | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a thermal compound between the transistor and the heat sink to improve thermal conductivity.
Biasing:
- Apply the base current (IB) carefully to avoid exceeding the maximum collector current (IC).
- Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating.
Power Dissipation:
- Monitor the power dissipation (PT) to prevent overheating. Use a heatsink if necessary to keep the temperature within safe limits.
Storage:
- Store the transistor in a dry, cool place to prevent damage from moisture and extreme temperatures.
Handling:
- Handle the transistor with care to avoid mechanical damage.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
- Use a suitable test setup to avoid overloading the device during testing.
Inquiry - 2SD668AVC