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2SD668AVC

Specifications

SKU: 11227639

BUY 2SD668AVC https://www.utsource.net/itm/p/11227639.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 450 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - - 15 A
Base Current IB - - 3 A
Power Dissipation PT - - 150 W TC = 25°C
Storage Temperature Range TSTG -55 - 150 °C
Operating Junction Temperature TJ -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 1.5 - °C/W

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified range.
    • Use a thermal compound between the transistor and the heat sink to improve thermal conductivity.
  2. Biasing:

    • Apply the base current (IB) carefully to avoid exceeding the maximum collector current (IC).
    • Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating.
  3. Power Dissipation:

    • Monitor the power dissipation (PT) to prevent overheating. Use a heatsink if necessary to keep the temperature within safe limits.
  4. Storage:

    • Store the transistor in a dry, cool place to prevent damage from moisture and extreme temperatures.
  5. Handling:

    • Handle the transistor with care to avoid mechanical damage.
    • Use appropriate ESD protection to prevent damage from static electricity.
  6. Testing:

    • Test the transistor under controlled conditions to ensure it meets the specified parameters.
    • Use a suitable test setup to avoid overloading the device during testing.
(For reference only)

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