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2SB648AVC

Specifications

SKU: 11227640

BUY 2SB648AVC https://www.utsource.net/itm/p/11227640.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCE - - 900 V Maximum voltage between collector and emitter with base open.
Emitter-Base Voltage VEB - - 5 V Maximum voltage between emitter and base.
Collector Current IC - - 15 A Maximum continuous collector current.
Base Current IB - - 3 A Maximum continuous base current.
Power Dissipation PT - - 125 W Maximum power dissipation at TA = 25°C.
Junction Temperature TJ - - 150 °C Maximum junction temperature.
Storage Temperature TSTG -55 - 150 °C Operating temperature range for storage and handling.
Transition Frequency fT - 5 - MHz Frequency at which the current gain drops to unity.
DC Current Gain hFE 20 70 300 - Forward current transfer ratio (β) at IC = 1A, VCE = 10V.

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings listed in the table.
    • Use appropriate heat sinks to manage power dissipation and maintain junction temperature within safe limits.
  2. Mounting:

    • Ensure proper mechanical mounting to avoid thermal stress.
    • Use thermal grease or thermal pads between the transistor and the heat sink to improve thermal conductivity.
  3. Electrical Connections:

    • Connect the collector, base, and emitter terminals correctly.
    • Use short leads to minimize inductive effects and parasitic oscillations.
  4. Biasing:

    • Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damage.
    • Use a suitable biasing circuit to maintain stable operation over temperature variations.
  5. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range.
    • Handle with care to prevent mechanical damage and electrostatic discharge (ESD).
  6. Testing:

    • Test the transistor using a suitable tester or multimeter to verify its parameters before installation.
    • Ensure that the testing environment does not exceed the maximum ratings.
  7. Application Notes:

    • Refer to application notes and datasheets for detailed information on specific applications and circuit design considerations.
(For reference only)

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