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2SA1012

Specifications

SKU: 11228045

BUY 2SA1012 https://www.utsource.net/itm/p/11228045.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - 45 - V
Emitter-Base Voltage VEB - 6 - V
Collector Current IC - 300 - mA
Base Current IB - 30 - mA
Power Dissipation PT - 625 - mW
Operating Temperature TOP -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Collector-Emitter Saturation Voltage VCE(sat) - 0.2 - V
Base-Emitter Saturation Voltage VBE(sat) - 1.8 - V
Transition Frequency fT - 250 - MHz
Storage Time tSTORAGE - 200 - ns

Instructions for Use:

  1. Handling:

    • Handle the 2SA1012 with care to avoid static damage.
    • Use proper anti-static precautions when handling the component.
  2. Mounting:

    • Ensure the mounting surface is clean and free from contaminants.
    • Use appropriate heat sinks if the power dissipation exceeds the maximum allowable value without a heat sink.
  3. Biasing:

    • Ensure the base current (IB) is sufficient to fully turn on the transistor.
    • Avoid exceeding the maximum collector current (IC) to prevent damage.
  4. Temperature:

    • Operate the transistor within the specified temperature range to ensure reliable performance.
    • Monitor the operating temperature to prevent overheating.
  5. Storage:

    • Store the 2SA1012 in a dry, cool place to prevent moisture damage.
    • Keep the component away from direct sunlight and extreme temperatures.
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2SA1012.
    • Check for continuity between the leads and ensure there are no short circuits.
  7. Circuit Design:

    • Refer to the typical application circuits provided in the datasheet for optimal performance.
    • Use appropriate decoupling capacitors to filter out noise and stabilize the circuit.
  8. Safety:

    • Always follow safety guidelines when working with electronic components.
    • Disconnect power before making any changes to the circuit.
(For reference only)

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