Specifications
SKU: 11228107
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | - | 800 | V |
Gate-Source Voltage | VGS | - | -15 | 0 | 20 | V |
Continuous Drain Current | ID | TC = 25°C | - | - | 4.0 | A |
TC = 100°C | - | - | 3.5 | A | ||
Pulse Drain Current | IDpeak | TC = 25°C, tp = 10 μs | - | - | 16.0 | A |
Power Dissipation | PD | TC = 25°C | - | - | 120 | W |
TC = 100°C | - | - | 80 | W | ||
Junction Temperature | TJ | - | - | - | 175 | °C |
Storage Temperature | TSTG | - | -65 | - | 150 | °C |
Total Device Dissipation | ET | TC = 25°C, td = 10 ms | - | - | 600 | mJ |
Instructions for Use:
Handling and Storage:
- Store the device in a dry environment to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the device.
Mounting and Assembly:
- Ensure proper heat sinking to manage the power dissipation, especially when operating at high current levels.
- Use appropriate mounting hardware to secure the device and ensure good thermal contact.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to avoid short circuits or incorrect operation.
- Use short, low-inductance leads to minimize parasitic effects.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table to prevent device failure.
- Operate within the specified temperature range to ensure reliable performance.
Testing:
- Use a suitable test setup to measure parameters such as VDS, ID, and VGS.
- Ensure that the test conditions match those specified in the table for accurate measurements.
Safety:
- Follow all safety guidelines when handling high-voltage and high-power devices.
- Use appropriate personal protective equipment (PPE) and grounding techniques.
By adhering to these guidelines, you can ensure the reliable and efficient operation of the STP4NK80Z MOSFET.
(For reference only)Inquiry - STP4NK80Z