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STP4NK80Z

Specifications

SKU: 11228107

BUY STP4NK80Z https://www.utsource.net/itm/p/11228107.html

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS - - - 800 V
Gate-Source Voltage VGS - -15 0 20 V
Continuous Drain Current ID TC = 25°C - - 4.0 A
TC = 100°C - - 3.5 A
Pulse Drain Current IDpeak TC = 25°C, tp = 10 μs - - 16.0 A
Power Dissipation PD TC = 25°C - - 120 W
TC = 100°C - - 80 W
Junction Temperature TJ - - - 175 °C
Storage Temperature TSTG - -65 - 150 °C
Total Device Dissipation ET TC = 25°C, td = 10 ms - - 600 mJ

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  2. Mounting and Assembly:

    • Ensure proper heat sinking to manage the power dissipation, especially when operating at high current levels.
    • Use appropriate mounting hardware to secure the device and ensure good thermal contact.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid short circuits or incorrect operation.
    • Use short, low-inductance leads to minimize parasitic effects.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to prevent device failure.
    • Operate within the specified temperature range to ensure reliable performance.
  5. Testing:

    • Use a suitable test setup to measure parameters such as VDS, ID, and VGS.
    • Ensure that the test conditions match those specified in the table for accurate measurements.
  6. Safety:

    • Follow all safety guidelines when handling high-voltage and high-power devices.
    • Use appropriate personal protective equipment (PPE) and grounding techniques.

By adhering to these guidelines, you can ensure the reliable and efficient operation of the STP4NK80Z MOSFET.

(For reference only)

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