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Specifications
SKU: 11228139
| Parameter | Symbol | Min | Typical | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 200 | V | - |
| Gate-Source Voltage | VGS | -15 | - | 15 | V | - |
| Continuous Drain Current | ID | - | - | 18 | A | TC = 25°C |
| Continuous Drain Current | ID | - | - | 10 | A | TC = 100°C |
| Pulse Drain Current | IDpeak | - | - | 36 | A | tp = 10 ms, duty cycle 1% |
| Total Power Dissipation | PTOT | - | - | 125 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.5 | °C/W | - |
Instructions for Use:
Handling:
- Handle with care to avoid static damage.
- Ensure that all connections are secure and free from corrosion.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to ensure proper operation.
- Do not exceed the maximum gate-source voltage to prevent damage to the device.
Current Limitation:
- Ensure that the continuous drain current (ID) does not exceed the maximum ratings, especially at higher temperatures.
- For pulse applications, do not exceed the pulse drain current (IDpeak) and observe the specified pulse duration and duty cycle.
Thermal Management:
- Provide adequate heat sinking to keep the junction temperature (TJ) within safe limits.
- Monitor the thermal resistance (RθJC) to ensure efficient heat dissipation.
Storage:
- Store in a dry, cool environment to prevent moisture damage.
- Observe the storage temperature range to avoid degradation of the device.
Mounting:
- Follow recommended mounting procedures to ensure good thermal contact and mechanical stability.
- Avoid excessive mechanical stress on the leads during soldering and assembly.
Inquiry - IRF644A
