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STF2HNK60Z

Specifications

SKU: 11228193

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Parameter Symbol Min Typical Max Unit Conditions
Blocking Voltage V(BR)DSS - 600 - V
On-State Resistance RDS(on) - 3.8 - @VGS = 15V, ID = 40A
Gate Charge QG - 140 - nC @VDS = 600V, VGS = 15V
Input Capacitance Ciss - 3700 - pF @VDS = 600V, f = 1MHz
Output Capacitance Coss - 1000 - pF @VDS = 600V, f = 1MHz
Reverse Transfer Capacitance Crss - 1400 - pF @VDS = 600V, f = 1MHz
Continuous Drain Current ID - 40 - A @Tc = 25°C
Pulse Drain Current Ibm - 120 - A @Tc = 25°C, t = 10μs
Power Dissipation PD - 210 - W @Tc = 25°C
Junction Temperature Tj - - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid static discharge which can damage the device.
  2. Biasing and Drive:

    • Apply gate voltage (VGS) between 10V and 15V for optimal performance.
    • Ensure gate resistance is low to minimize switching losses.
  3. Thermal Management:

    • Use appropriate thermal interface materials (TIM) to enhance heat transfer from the device to the heatsink.
    • Monitor temperature to prevent overheating and ensure reliable operation.
  4. Electrical Stress:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Implement overvoltage and overcurrent protection circuits to safeguard the device.
  5. Storage and Environment:

    • Store in a dry, cool place to prevent moisture damage.
    • Avoid exposure to corrosive environments.
  6. Testing and Validation:

    • Perform thorough testing under expected operating conditions to ensure reliability.
    • Validate the design with safety margins to account for variations in environmental and operational parameters.
(For reference only)

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