Specifications
SKU: 11228193
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Blocking Voltage | V(BR)DSS | - | 600 | - | V | |
On-State Resistance | RDS(on) | - | 3.8 | - | mΩ | @VGS = 15V, ID = 40A |
Gate Charge | QG | - | 140 | - | nC | @VDS = 600V, VGS = 15V |
Input Capacitance | Ciss | - | 3700 | - | pF | @VDS = 600V, f = 1MHz |
Output Capacitance | Coss | - | 1000 | - | pF | @VDS = 600V, f = 1MHz |
Reverse Transfer Capacitance | Crss | - | 1400 | - | pF | @VDS = 600V, f = 1MHz |
Continuous Drain Current | ID | - | 40 | - | A | @Tc = 25°C |
Pulse Drain Current | Ibm | - | 120 | - | A | @Tc = 25°C, t = 10μs |
Power Dissipation | PD | - | 210 | - | W | @Tc = 25°C |
Junction Temperature | Tj | - | - | 175 | °C | |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid static discharge which can damage the device.
Biasing and Drive:
- Apply gate voltage (VGS) between 10V and 15V for optimal performance.
- Ensure gate resistance is low to minimize switching losses.
Thermal Management:
- Use appropriate thermal interface materials (TIM) to enhance heat transfer from the device to the heatsink.
- Monitor temperature to prevent overheating and ensure reliable operation.
Electrical Stress:
- Do not exceed the maximum ratings for voltage, current, and power dissipation.
- Implement overvoltage and overcurrent protection circuits to safeguard the device.
Storage and Environment:
- Store in a dry, cool place to prevent moisture damage.
- Avoid exposure to corrosive environments.
Testing and Validation:
- Perform thorough testing under expected operating conditions to ensure reliability.
- Validate the design with safety margins to account for variations in environmental and operational parameters.
Inquiry - STF2HNK60Z