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2SK2632LS

Specifications

SKU: 11228270

BUY 2SK2632LS https://www.utsource.net/itm/p/11228270.html

Parameter Symbol Value Unit
Drain-Source Voltage V(DS) 150 V
Gate-Source Voltage V(GS) ±20 V
Continuous Drain Current I(D) 10 A
Pulse Drain Current I(DM) 30 A
Power Dissipation P(TOT) 120 W
Junction Temperature T(J) -55 to +175 °C
Storage Temperature T(STG) -55 to +150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SK2632LS with care to avoid mechanical damage.
    • Use ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within the specified range.
    • Use recommended mounting torque for the screws to ensure good thermal contact without causing damage.
  3. Biasing:

    • Apply the gate-source voltage (V(GS)) carefully, ensuring it does not exceed the maximum ratings.
    • The drain-source voltage (V(DS)) should also be kept within the specified limits to avoid breakdown.
  4. Current Limiting:

    • Use appropriate current-limiting resistors or circuits to prevent the continuous drain current (I(D)) from exceeding 10A.
    • For pulse applications, ensure that the pulse drain current (I(DM)) does not exceed 30A.
  5. Thermal Management:

    • Monitor the junction temperature (T(J)) to ensure it remains between -55°C and +175°C.
    • Use thermal management techniques such as heatsinks, fans, or cooling systems to maintain optimal operating temperatures.
  6. Storage:

    • Store the 2SK2632LS in a dry, cool place with temperatures between -55°C and +150°C.
    • Avoid exposure to high humidity and corrosive environments.
  7. Testing:

    • Perform initial testing at low power levels to verify correct operation before applying full load conditions.
    • Regularly inspect the device for signs of wear or damage during operation and maintenance.
(For reference only)

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