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Specifications
SKU: 11228957
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | - | 60 | V | Maximum voltage between drain and source with gate open |
| Gate-Source Voltage | VGS | -12 | - | 12 | V | Maximum voltage between gate and source |
| Continuous Drain Current | ID | - | 4.5 | 5 | A | Continuous current flowing from drain to source |
| Power Dissipation | PTOT | - | - | 1.5 | W | Maximum power dissipation at TA = 25°C |
| Junction Temperature | TJ | -55 | - | 150 | °C | Operating junction temperature range |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Temperature range for storage |
| Total Gate Charge | QG | - | 25 | 35 | nC | Total gate charge |
| Input Capacitance | Ciss | - | 380 | 500 | pF | Input capacitance at VDS = 10V, VGS = 0V |
| Output Capacitance | Coss | - | 150 | 200 | pF | Output capacitance at VDS = 10V, VGS = 0V |
| Reverse Transfer Capacitance | Crss | - | 50 | 70 | pF | Reverse transfer capacitance at VDS = 10V, VGS = 0V |
| RDS(on) at VGS = 4.5V | RDS(on) | - | 0.15 | 0.20 | Ω | On-state resistance at VGS = 4.5V |
| RDS(on) at VGS = 10V | RDS(on) | - | 0.09 | 0.12 | Ω | On-state resistance at VGS = 10V |
Instructions for Using FDP2552
Handling and Storage:
- Store the device in a dry, cool place within the specified storage temperature range (-55°C to 150°C).
- Handle the device with care to avoid static discharge, which can damage the gate oxide.
Mounting:
- Ensure proper heat sinking if the device is expected to dissipate significant power.
- Use appropriate mounting techniques to ensure good thermal contact and mechanical stability.
Biasing:
- Apply the gate-source voltage (VGS) carefully to stay within the specified limits (-12V to 12V).
- Ensure that the gate drive circuitry provides sufficient current to charge and discharge the gate capacitance quickly.
Operation:
- Operate the device within the specified drain-source voltage (VDS) and continuous drain current (ID) limits.
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
Testing:
- Use appropriate test equipment to measure parameters such as RDS(on), Ciss, Coss, and Crss.
- Follow standard testing procedures to avoid damaging the device.
Safety:
- Always use protective equipment when handling high-voltage or high-current circuits.
- Ensure that the device is properly isolated from live circuits during installation and maintenance.
By following these guidelines, you can ensure reliable and efficient operation of the FDP2552 MOSFET.
(For reference only)Inquiry - FDP2552
