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Specifications
SKU: 11229133
| Parameter | Symbol | Min | Typical | Max | Unit | Condition/Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 100 | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Continuous Drain Current | ID | - | 20 | - | A | TC = 25°C |
| Pulse Drain Current | IDpeak | - | 40 | - | A | tp = 10 ms, IG = 3 A |
| Power Dissipation | Ptot | - | - | 175 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Case | RthJC | - | 0.5 | - | °C/W | |
| Input Capacitance | Ciss | - | 1200 | - | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 280 | - | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 90 | - | pF | VDS = 25 V, f = 1 MHz |
| Gate Charge | QG | - | 120 | - | nC | VGS = 10 V, ID = 20 A |
| Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 250 μA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.055 | - | Ω | VGS = 10 V, ID = 20 A, TA = 25°C |
| Total Gate Charge | QGT | - | 140 | - | nC | VGS = 10 V, ID = 20 A |
Instructions for Use:
Handling Precautions:
- Handle the IRFPC50 with care to avoid static discharge which can damage the device.
- Use proper ESD (Electrostatic Discharge) protection equipment when handling.
Mounting:
- Ensure proper heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
- Use thermal compound between the device and the heat sink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Use a series resistor in the gate circuit to limit the gate current and protect the gate from excessive voltage spikes.
Operation:
- Operate the device within the specified temperature range to ensure reliable performance.
- Monitor the drain current (ID) and power dissipation (Ptot) to prevent overheating.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against moisture and static damage.
Testing:
- Use a multimeter or other appropriate testing equipment to verify the device parameters before installation.
- Test the device under controlled conditions to ensure it meets the required specifications.
By following these guidelines, you can ensure optimal performance and longevity of the IRFPC50 MOSFET.
(For reference only)Inquiry - IRFPC50
