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MDF18N50BTH

Specifications

SKU: 11229176

BUY MDF18N50BTH https://www.utsource.net/itm/p/11229176.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - 500 - V
Gate-Source Voltage VGS -20 0 20 V
Continuous Drain Current (Tc = 25°C) ID(25°C) - 18 - A
Continuous Drain Current (Tc = 100°C) ID(100°C) - 12 - A
Pulse Drain Current (Tc = 25°C, 10 μs) IDM(25°C) - 60 - A
Power Dissipation (Tc = 25°C) Ptot(25°C) - 180 - W
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C
Thermal Resistance, Junction to Case RthJC - 0.7 - °C/W
Total Gate Charge QG - 44 - nC
Input Capacitance Ciss - 1650 - pF
Output Capacitance Coss - 340 - pF
Reverse Transfer Capacitance Crss - 120 - pF

Instructions for Use:

  1. Voltage Ratings:

    • Ensure that the drain-source voltage (VDS) does not exceed 500V.
    • The gate-source voltage (VGS) should be within -20V to +20V.
  2. Current Ratings:

    • The continuous drain current (ID) at 25°C is 18A, and at 100°C it is 12A.
    • For pulse conditions, the maximum drain current (IDM) is 60A for a 10 μs pulse at 25°C.
  3. Power Dissipation:

    • The power dissipation (Ptot) at 25°C is 180W.
  4. Temperature Considerations:

    • The junction temperature (TJ) should not exceed 150°C.
    • Store the device within the temperature range of -55°C to 150°C.
  5. Thermal Management:

    • The thermal resistance from the junction to the case (RthJC) is 0.7°C/W. Ensure adequate heat sinking to manage thermal dissipation.
  6. Capacitance and Charge:

    • Be aware of the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) for circuit design and switching performance optimization.
  7. Handling:

    • Handle the device with care to avoid damage to the leads and the die.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
  8. Mounting:

    • Ensure proper mounting to the PCB to maintain mechanical stability and thermal performance.
    • Use recommended soldering profiles to avoid thermal shock during assembly.
  9. Testing:

    • Test the device under controlled conditions to verify its performance and reliability before final integration into the system.
(For reference only)

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