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IRFB3206

Specifications

SKU: 11229395

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Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 60 V
Gate-Source Voltage VGS -10 - 10 V
Continuous Drain Current ID - - 45 A TC = 25°C
Continuous Drain Current ID - - 30 A TC = 75°C
Pulse Drain Current ID(p) - - 90 A tp = 10 μs, TC = 25°C
RDS(on) at VGS = 10V RDS(on) - 4.0 - ID = 30 A
RDS(on) at VGS = 4.5V RDS(on) - 5.5 - ID = 15 A
Input Capacitance Ciss - 1380 - pF f = 1 MHz
Output Capacitance Coss - 450 - pF f = 1 MHz
Reverse Transfer Capacitance Crss - 220 - pF f = 1 MHz
Total Gate Charge QG - 57.5 - nC VDS = 50 V, VGS = 10 V, ID = 10 A
Gate-Source Threshold Voltage VGS(th) 2.0 2.5 3.0 V ID = 250 μA
Power Dissipation PD - - 180 W TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the power dissipation.
    • Handle with care to avoid damage to the leads and the die.
  2. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • Ensure that the gate-source voltage does not exceed the maximum rating to prevent damage.
  3. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays below the maximum rating.
    • Use thermal paste and heatsinks to improve heat dissipation.
  4. Pulse Operation:

    • For pulse operation, ensure that the pulse width and frequency are within the safe operating area (SOA) of the device.
    • Check the pulse drain current (ID(p)) and ensure it does not exceed the maximum rating.
  5. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Follow ESD (Electrostatic Discharge) precautions to avoid damaging the device.
  6. Testing:

    • Use appropriate test equipment to measure parameters such as RDS(on), VGS(th), and other electrical characteristics.
    • Refer to the datasheet for specific test conditions and procedures.
(For reference only)

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