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FCP20N60

Specifications

SKU: 11229735

BUY FCP20N60 https://www.utsource.net/itm/p/11229735.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - - 600 V
Gate-Source Voltage VGS -15 - 15 V
Continuous Drain Current ID - - 20 A @ TC = 25°C
Pulse Drain Current ID(p) - - 32 A tp = 10 μs, IG = 10 A
Power Dissipation PTOT - - 180 W @ TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  2. Mounting:

    • Ensure proper thermal management by using a heatsink if necessary.
    • Apply thermal paste between the device and the heatsink for better heat dissipation.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use appropriate wire gauges to handle the current levels specified.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
    • Monitor the junction temperature to ensure it does not exceed 175°C.
  5. Gate Drive:

    • Apply a sufficient gate voltage to fully turn on the MOSFET.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  6. Protective Circuits:

    • Implement overvoltage and overcurrent protection circuits to safeguard the device.
    • Consider using snubber circuits to suppress voltage spikes during switching.
  7. Testing:

    • Perform initial testing at reduced power levels to verify proper operation.
    • Regularly inspect the device and connections for signs of wear or damage.
(For reference only)

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