Specifications
SKU: 11229735
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 600 | V | |
Gate-Source Voltage | VGS | -15 | - | 15 | V | |
Continuous Drain Current | ID | - | - | 20 | A | @ TC = 25°C |
Pulse Drain Current | ID(p) | - | - | 32 | A | tp = 10 μs, IG = 10 A |
Power Dissipation | PTOT | - | - | 180 | W | @ TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Handling and Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the device.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary.
- Apply thermal paste between the device and the heatsink for better heat dissipation.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate wire gauges to handle the current levels specified.
Operating Conditions:
- Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
- Monitor the junction temperature to ensure it does not exceed 175°C.
Gate Drive:
- Apply a sufficient gate voltage to fully turn on the MOSFET.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Protective Circuits:
- Implement overvoltage and overcurrent protection circuits to safeguard the device.
- Consider using snubber circuits to suppress voltage spikes during switching.
Testing:
- Perform initial testing at reduced power levels to verify proper operation.
- Regularly inspect the device and connections for signs of wear or damage.
Inquiry - FCP20N60