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Specifications
SKU: 11231028
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V | |
| Gate-Source Voltage | VGS | - | ±20 | - | V | |
| Continuous Drain Current | ID | - | 4.5 | - | A | TC = 25°C |
| Pulse Drain Current | IDpeak | - | 18 | - | A | tp = 10 μs, IG = 3 A |
| Power Dissipation | PD | - | 75 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Case | RθJC | - | 1.5 | - | °C/W | |
| Input Capacitance | Ciss | - | 1500 | - | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 40 | - | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 20 | - | pF | VDS = 25 V, f = 1 MHz |
| Gate Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 μA, TA = 25°C |
| On-State Resistance | RDS(on) | - | 0.18 | - | Ω | VGS = -10 V, ID = -4.5 A, TA = 25°C |
| Turn-On Delay Time | td(on) | - | 35 | - | ns | VGS = -10 V, IG = -1 A, VDS = 25 V, ID = -4.5 A |
| Rise Time | tr | - | 30 | - | ns | VGS = -10 V, IG = -1 A, VDS = 25 V, ID = -4.5 A |
| Turn-Off Delay Time | td(off) | - | 15 | - | ns | VGS = -10 V, IG = -1 A, VDS = 25 V, ID = -4.5 A |
| Fall Time | tf | - | 10 | - | ns | VGS = -10 V, IG = -1 A, VDS = 25 V, ID = -4.5 A |
Instructions for Use:
Handling and Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle the device with care to avoid mechanical stress or damage to the leads.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use a thermal compound between the device and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Avoid exceeding the maximum gate-source voltage to prevent damage to the device.
Current Limiting:
- Use appropriate current-limiting resistors to protect the device from excessive current during turn-on and turn-off transitions.
Gate Drive:
- Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly, reducing switching losses.
Overvoltage Protection:
- Implement overvoltage protection circuits to safeguard against transient voltages that may exceed the maximum drain-source voltage.
Thermal Management:
- Monitor the junction temperature to ensure it does not exceed the maximum rating. Use forced air cooling or larger heatsinks if necessary.
Electrostatic Discharge (ESD) Protection:
- Handle the device with ESD protection measures to prevent damage from static electricity.
By following these guidelines, you can ensure optimal performance and reliability of the IRF9321 device in your application.
(For reference only)Inquiry - IRF9321
