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IRFP150N

Specifications

SKU: 11232521

BUY IRFP150N https://www.utsource.net/itm/p/11232521.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 150 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 33 - A TC = 25°C
Continuous Drain Current ID - 20 - A TC = 100°C
Pulse Drain Current ID(p) - 90 - A tp = 10 ms, IG = 10 A
Power Dissipation PTOT - - 160 W TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance RθJC - 0.45 - °C/W Junction to Case
Total Gate Charge QG - 85 - nC VGS = 15 V, ID = 33 A
Input Capacitance Ciss - 1600 - pF VDS = 25 V, f = 1 MHz
Output Capacitance Coss - 380 - pF VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 140 - pF VDS = 25 V, f = 1 MHz

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
    • Handle the device with care to avoid damage to the gate, which is sensitive to electrostatic discharge (ESD).
  2. Biasing:

    • Apply the appropriate gate-source voltage (VGS) to control the drain current (ID). The typical operating range is from 0 V to 15 V.
    • Avoid exceeding the maximum gate-source voltage (±20 V) to prevent damage.
  3. Current Limiting:

    • Ensure that the continuous drain current does not exceed 33 A at 25°C or 20 A at 100°C to prevent overheating and potential failure.
    • For pulse operation, do not exceed 90 A for pulses of 10 ms duration.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
    • Use thermal paste and a heatsink to improve heat dissipation.
  5. Storage:

    • Store the device in a dry environment with temperatures between -55°C and 150°C to avoid degradation.
  6. Testing:

    • Before installing the device in a circuit, perform a continuity check to ensure there are no short circuits or open circuits.
    • Use a low-voltage power supply to test the device under controlled conditions to avoid damage.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use appropriate protective equipment and grounding techniques to prevent ESD damage.
(For reference only)

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