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IRFP054N

Specifications

SKU: 11232839

BUY IRFP054N https://www.utsource.net/itm/p/11232839.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 100 V -
Gate-Source Voltage VGS -20 - 20 V -
Continuous Drain Current ID - 33 - A TC = 25°C
Pulse Drain Current ID(p) - 80 - A tp = 10 μs, IG = 10 A, TC = 25°C
Total Power Dissipation PT - - 160 W TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature Tstg -55 - 150 °C -
Thermal Resistance, Junction to Case RθJC - - 0.47 °C/W -

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is mounted on a heatsink to maintain the junction temperature within safe limits.
    • Handle the device with care to avoid mechanical damage.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use appropriate gate drive circuits to ensure reliable operation.
  3. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature below 175°C.
    • Use thermal paste between the device and the heatsink for better heat dissipation.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to avoid damage.
  5. Pulse Operation:

    • For pulse operation, ensure that the pulse duration and frequency do not exceed the safe operating area (SOA).
  6. Storage:

    • Store the device in a dry environment within the storage temperature range (-55°C to 150°C).
  7. Testing:

    • Perform initial testing at low power levels to verify proper operation before full-scale use.
  8. ESD Protection:

    • Handle the device with ESD protection measures to prevent damage from static electricity.
  9. Compliance:

    • Ensure compliance with relevant safety and regulatory standards for your application.
(For reference only)

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