Specifications
SKU: 11232839
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 100 | V | - |
Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
Continuous Drain Current | ID | - | 33 | - | A | TC = 25°C |
Pulse Drain Current | ID(p) | - | 80 | - | A | tp = 10 μs, IG = 10 A, TC = 25°C |
Total Power Dissipation | PT | - | - | 160 | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | - |
Storage Temperature | Tstg | -55 | - | 150 | °C | - |
Thermal Resistance, Junction to Case | RθJC | - | - | 0.47 | °C/W | - |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is mounted on a heatsink to maintain the junction temperature within safe limits.
- Handle the device with care to avoid mechanical damage.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate gate drive circuits to ensure reliable operation.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature below 175°C.
- Use thermal paste between the device and the heatsink for better heat dissipation.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the specified temperature range to avoid damage.
Pulse Operation:
- For pulse operation, ensure that the pulse duration and frequency do not exceed the safe operating area (SOA).
Storage:
- Store the device in a dry environment within the storage temperature range (-55°C to 150°C).
Testing:
- Perform initial testing at low power levels to verify proper operation before full-scale use.
ESD Protection:
- Handle the device with ESD protection measures to prevent damage from static electricity.
Compliance:
- Ensure compliance with relevant safety and regulatory standards for your application.
Inquiry - IRFP054N