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Specifications
SKU: 11233211
Below is the parameter table and instructions for the IRFP90N20DPBF, a 200V N-Channel Power MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 200 | V | - |
| Gate-Source Voltage | VGSS | -10 | - | 10 | V | - |
| Continuous Drain Current | ID | - | - | 9.0 | A | TC = 25°C |
| Continuous Drain Current (Pulsed) | ID(p) | - | - | 36 | A | TC = 25°C, tp = 10 μs |
| Continuous Gate-Source Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | 0.72 | - | Ω | VGS = 10 V, ID = 9 A |
| Total Power Dissipation | PTOT | - | - | 180 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | - | - | 1.0 | °C/W | - |
Instructions
Handling Precautions:
- ESD Sensitivity: The IRFP90N20DPBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures such as wrist straps, static-safe work surfaces, and grounded equipment.
- Storage: Store the device in a dry, cool place away from direct sunlight and sources of heat.
Mounting:
- Heat Sinking: For optimal performance and to avoid overheating, use a suitable heat sink. The thermal resistance (RθJC) should be considered when designing the heat sink.
- Torque: Apply the recommended torque to the mounting screws to ensure good thermal contact without causing damage to the device. Refer to the datasheet for specific torque values.
Operating Conditions:
- Voltage Ratings: Ensure that the drain-source voltage (VDSS) does not exceed 200V to prevent breakdown.
- Current Ratings: Do not exceed the continuous drain current (ID) of 9.0A at a case temperature of 25°C. For pulsed applications, do not exceed 36A with a pulse width of 10 μs.
- Temperature: Operate the device within the specified junction temperature range (TJ) of -55°C to 150°C.
Gate Drive:
- Gate-Source Voltage: The gate-source voltage (VGS) should be kept between -10V and 10V to avoid damaging the gate oxide.
- Turn-On and Turn-Off: Use appropriate gate drive circuits to ensure fast and clean turn-on and turn-off transitions. This helps reduce switching losses and improves efficiency.
Testing:
- Initial Testing: Before integrating the device into a circuit, perform initial tests to verify its functionality. Measure the gate-source threshold voltage (VGS(th)) and on-state resistance (RDS(on)) to ensure they fall within the specified ranges.
Application Notes:
- Circuit Design: Refer to application notes and design guidelines provided by the manufacturer for specific recommendations on using the IRFP90N20DPBF in various applications, such as motor control, power supplies, and switching circuits.
By following these parameters and instructions, you can ensure reliable and efficient operation of the IRFP90N20DPBF in your electronic designs.
(For reference only)Inquiry - IRFP90N20DPBF
