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WFF2N60

Specifications

SKU: 11234316

BUY WFF2N60 https://www.utsource.net/itm/p/11234316.html

Parameter Symbol Min Typ Max Unit Description
Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage
Continuous Drain Current (Tc = 25°C) ID - 2.0 - A Continuous Drain Current at 25°C Case Temperature
Continuous Drain Current (Tc = 75°C) ID - 1.4 - A Continuous Drain Current at 75°C Case Temperature
Gate-Source Voltage VGS -20 - 20 V Gate-to-Source Voltage
Input Capacitance Ciss - 1300 - pF Input Capacitance at VDS = 15V, VGS = 0V, f = 1 MHz
Output Capacitance Coff - 380 - pF Output Capacitance at VDS = 15V, VGS = 0V, f = 1 MHz
Reverse Transfer Capacitance Crss - 160 - pF Reverse Transfer Capacitance at VDS = 15V, VGS = 0V, f = 1 MHz
On-State Resistance (VGS = 10V) RDS(on) - 3.0 - Ω On-State Drain-to-Source Resistance at VGS = 10V
Total Gate Charge Qg - 39 - nC Total Gate Charge at VDS = 400V, VGS = 10V, IDS = 2A
Switching Energy Loss Eoss - 230 - nJ Output Capacitance Energy at VDS = 400V, IDS = 2A
Power Dissipation (Tc = 25°C) PD - 40 - W Maximum Power Dissipation at 25°C Case Temperature
Junction Temperature Tj -55 - 150 °C Operating Junction Temperature Range
Storage Temperature Tstg -55 - 150 °C Storage Temperature Range

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge which can damage the component.
  2. Mounting:

    • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within specified limits.
    • Use appropriate mounting hardware to secure the device and ensure good thermal contact.
  3. Electrical Connections:

    • Connect the gate, drain, and source terminals correctly to avoid damage.
    • Use short leads to minimize parasitic inductance and capacitance.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Ensure the junction temperature remains within the specified range to avoid thermal runaway.
  5. Testing:

    • Test the device under controlled conditions to verify its performance and reliability.
    • Use appropriate test equipment and procedures to avoid damaging the device during testing.
  6. Safety:

    • Follow all safety guidelines when handling high-voltage circuits.
    • Use protective equipment such as gloves and goggles when necessary.
  7. Troubleshooting:

    • If the device fails, check for overvoltage, overcurrent, or overheating conditions.
    • Replace any damaged components and retest the circuit.
(For reference only)

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