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Specifications
SKU: 11239744
| Parameter | IGA03N120H2 | G03H1202 |
|---|---|---|
| Type | IGBT | Diode |
| Voltage Rating (V) | 1200 | 1200 |
| Current Rating (A) | 3 | 3 |
| Case Type | TO-252 | TO-252 |
| Max Junction Temperature (°C) | 150 | 150 |
| Storage Temperature Range (°C) | -55 to 150 | -55 to 150 |
| Thermal Resistance (Rth(j-c)) (°C/W) | 65 | 65 |
| Forward Voltage Drop (Vf) at Rated Current (V) | - | 1.7 |
| Reverse Recovery Time (trr) (ns) | - | 120 |
| Turn-on Delay Time (ton(d)) (ns) | 40 | - |
| Turn-off Fall Time (toff(f)) (ns) | 90 | - |
Instructions:
IGA03N120H2 (IGBT)
- Handling: Use proper ESD protection when handling the device.
- Mounting: Ensure the device is securely mounted to a heatsink to manage thermal resistance.
- Operation: Operate within the specified voltage and current ratings to avoid damage.
- Gate Drive: Use appropriate gate drive circuits to ensure reliable turn-on and turn-off times.
G03H1202 (Diode)
- Handling: Use proper ESD protection when handling the device.
- Mounting: Ensure the device is securely mounted to a heatsink to manage thermal resistance.
- Operation: Operate within the specified voltage and current ratings to avoid damage.
- Reverse Recovery: Be aware of the reverse recovery time to prevent excessive power dissipation during switching operations.
Inquiry - IGA03N120H2 , G03H1202
