Instructions for Use:

1. Mounting and Handling:

   • Handle the IHW30N135R3 with care to avoid mechanical stress.
   • Ensure proper thermal management by using appropriate heatsinks or cooling solutions.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short, low-inductance leads to minimize parasitic effects.

3. Biasing and Drive:

   • Apply the gate-source voltage (V_GS) within the specified range (-15V to +15V).
   • Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Thermal Considerations:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175°C.
   • Use thermal vias and a heatsink to dissipate heat effectively.

5. Overvoltage Protection:

   • Implement overvoltage protection circuits to prevent damage from transient voltages exceeding the breakdown voltage (V_DS(BR)).

6. Overcurrent Protection:

   • Use current limiting or protective devices to prevent excessive drain current (I_D) that could lead to device failure.

7. Storage and Transportation:

   • Store the IHW30N135R3 in a dry, cool place away from direct sunlight.
   • Follow ESD (Electrostatic Discharge) precautions during handling and transportation.

8. Testing:

   • Perform initial testing at room temperature and gradually increase the load and environmental conditions to validate performance.
   • Regularly inspect the device for signs of wear or damage.